Tunnelli diod sahifasining manbasini koʻrish

[[Fayl:TunnelDiode_10mA_germanium.jpg|right|thumb|250x250px| 10&nbsp;mA germaniyli tunnelli diodi Tektronix &nbsp;571 egri chiziq oluvchi sinov qurilmasiga o'rnatilgan ]]
'''Tunnelli diodi''' yoki '''Esaki diodi,''' [[tunnel effekti]] deb ataladigan [[Kvant mexanika|kvanto mexanik]] effekt tufayli "manfiy qarshilik" ga ega bo'lgan [[Diod|yarimo'tkazgichli diod]] turidir. U 1957 yil avgust oyida [[Leo Esaki]], Yuriko Kurose va Takashi Suzuki tomonidan, ular [[Sony]]<ref>{{Cite journal|last=Esaki|first1=Leo|date=1958-01-15|title=New Phenomenon in Narrow Germanium p−n Junctions|url=http://link.aps.org/doi/10.1103/PhysRev.109.603|journal=Physical Review|volume=109|issue=2|pages=603–604|doi=10.1103/PhysRev.109.603|bibcode=1958PhRv..109..603E}}</ref> nomi bilan mashhur Tokio Tsushin Kogyoda ishlayotganlarida ixtiro qilingan.   1973 yilda Esaki [[Brian Josephson|Brayan Jozefson]] bilan birgalikda ushbu diodlarda ishlovchi [[Tunnel effekti|elektron tunnel]] effektini kashf etgani uchun [[Fizika boʻyicha Nobel mukofoti|fizika bo'yicha Nobel mukofotini]] oladi. Robert Noys [[William Shockley|Uilyam Shoklida]] uchun ishlayotganida mustaqil ravishda tunnel diodi g'oyasini o'ylab topadi, lekin uni amalga oshira olmaydi. <ref>{{Kitob manbasi |title=The Man Behind the Microchip: Robert Noyce and the Invention of Silicon Valley |last=Berlin |first=Leslie |authorlink=Leslie_Berlin |year=2005 |publisher=Oxford University Press |location=Oxford, UK |isbn=0-19-516343-5 |url=https://archive.org/details/manbehindmicroc000berl}}</ref> Tunnel diodlari birinchi marta Sony tomonidan 1957 yilda <ref>{{Yangiliklar manbasi |script-title=ja:ソニー半導体の歴史 |language=ja |url=http://www.sony.co.jp/Products/SC-HP/outline/overview/history.html |url-status=dead |archive-url=https://web.archive.org/web/20090202103904/http://www.sony.co.jp/Products/SC-HP/outline/overview/history.html |archive-date=2009-02-02}}</ref> ishlab chiqarilgan, keyin [[General Electric]] va boshqa kompaniyalar taxminan 1960 yillarda ishlab chiqariladi. Bugungi kunda ham kam hajmda ishlab chiqariladi. <ref>{{Veb manbasi |url=https://www.eetimes.com/special/special_issues/millennium/milestones/holonyak.html |sarlavha=Tunnel diodes: the transistor killers |muallif=Rostky |ism=George |ish=[[EE Times]] |arxivurl=https://web.archive.org/web/20100107111641/https://www.eetimes.com/special/special_issues/millennium/milestones/holonyak.html |arxivsana=7 January 2010 |qaralgan sana=2 October 2009}}</ref>

Tunnel diodlari 10 &nbsp;nm (100&nbsp;[[Angstrem (birlik)|Å]] ) kenglikga ega kuchli [[Yarimoʻtkazgichlarni dopingi|doping]] qilingan [[N-p o‘tish|(PN) o'tishga]] dan iborat. Og'ir doping natijasida singan [[Taqiqlangan zona|potensial to'siq]] paydo bo'ladi, bu yerda N tomonidagi o'tkazuvchanlik zonasi [[Elektron konfiguratsiyasi|elektronlar holatlari]] P tomonidagi valentlik diapazoni [[Elektron teshik|kovaklar holatlari]] bilan ko'proq yoki kamroq mos keladi. Ular odatda [[Germaniy|germaniydan]] tayyorlanadi, ammo galyum arsenid va [[kremniy]] materiallaridan ham tayyorlanishi mumkin.

== Qo'llanilishi ==
Ishlash diapazonining bir qismidagi "manfiy" differensial qarshilik ularga uzib ulovchi  [[Gisterezis|histerezdan]] foydalangan holda [[Signal generatori|osilatorlar]] va [[Elektr signallarni kuchaytirish|kuchaytirgichlar]] sifatida ishlashga imkon beradi. Ular, shuningdek, chastota konvertorlari va [[Signalni detektorlash|detektorlari]] sifatida ishlatiladi. <ref name="Fink">{{Kitob manbasi |editor=Fink, Donald G. |title=Electronic Engineers Handbook |url=https://archive.org/details/electronicsengin0000fink_f6k4 |publisher=McGraw Hill |location=New York, NY |year=1975 |isbn=0-07-020980-4}}</ref> {{Rp|7–35}}Ularning kichik<nowiki/>[[Elektr sigʻim|sig'imi]] oddiy diodlar va [[Tranzistor|tranzistorlar]] diapazonidan ancha yuqori bo'lgan mikroto'lqinli chastotalarda ishlashga imkon beradi.
[[Fayl:10Gig_Tunnel_Amp_M.jpg|thumb|250x250px| 8–12&nbsp;Gigagertsli tunnelli diodli kuchaytirgich, taxminan 1970 yil.]]

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[[Turkum:Milliy Fizika]]